个人简历

个人简介
张法碧，男，本科和硕士毕业于哈尔滨工业大学，博士毕业于日本佐贺大学。“广西E层次人才”，\

近期论文

（-3）FabiZhang,HaiouLi,QixinGuo,StructuralandElectricalPropertiesofGa2O3FilmsDepositedunderDifferentAtmospheresbyPulsedLaserDeposition.JournalofElectronicMaterials,47(2018)6635-6640
（-2）Q.Li,Y.Wen,F.Zhang(通讯作者),H.Li,G.Xiao,Y.ChenandT.Fu,AnovelSOILDMOSwithsubstratefieldplateandvariable-kdielectricburiedlayerResultsinPhysics10,46-54(2018).
（-1）FabiZhang,HaiouLi,Yi-TaoCui,Guo-LingLi,andQixinGuo,EvolutionofopticalpropertiesandbandstructurefromamorphoustocrystallineGa2O3films,AIPADVANCES8,045112(2018)
(1)H.Li,Y.Li,G.Xiao,X.Gao,Q.Li,Y.Chen,T.Fu,T.Sun,F.Zhang(通讯作者)andN.Yu,SimplefabricationZnO/β-Ga2O3core/shellnanorodarraysandtheirphotoresponseproperties,OpticalMaterialsExpress,2018,8(4):794
(2)FabiZhang,HaiouLi,MakotoArita,QixinGuo,Ultravioletdetectorsbasedon(GaIn)2O3films,Opt.Mater.Express,2017.9,7:3769~3779
(3)FabiZhang,MakotoArita,XuWang,ZhengweiChen,KatsuhikoSaito,TooruTanaka,MitsuhiroNishio,TeruakiMotooka,QixinGuo,TowardcontrollingthecarrierdensityofSidopedGa2O3filmsbypulsedlaserdeposition,AppliedPhysicsLetters,2016,109:102105
(4)FabiZhang，KatsuhikoSaito,TooruTanaka,MitsuhiroNishio,QixinGuo,ElectricalpropertiesofSidopedGa2O3filmsgrownbypulsedLaserdeposition，JournalofMaterialsScience:MaterialsinElectronics26(12),9624(2015)
(5)FabiZhang,HidekiJan,KatsuhikoSaito,TooruTanaka,MitsuhiroNishio,TakashiNagaoka，MakotoArita，QixinGuo，Towardtheunderstandingofannealingeffectson(GaIn)2O3films,ThinSolidFilms,2015,578：1-6。
(6)FabiZhang,KatsuhikoSaito,TooruTanaka,MitsuhiroNishio,MakotoArita,QixinGuo,Widebandgapengineeringof(AlGa)2O3films，AppliedPhysicsLetters，2014，105：162107。
(7)FabiZhang,KatsuhikoSaito,TooruTanaka,MitsuhiroNishio,QixinGuo,Thermalannealingimpactoncrystalqualityof(GaIn)2O3alloys,JournalofAlloysandCompounds,2014,614:173-176。
(8)FabiZhang,KatsuhikoSaito,TooruTanaka,MitsuhiroNishio,QixinGuo,Widebandgapengineeringof(GaIn)2O3films,SolidStateCommunications,2014,186：28-31。
(9)F.B.Zhang,K.Saito,T.Tanaka,M.Nishio,Q.X.Guo,StructuralandopticalpropertiesofGa2O3filmsonsapphiresubstratesbypulsedlaserdeposition,JournalofCrystalGrowth,2014,387:96-100。
(10)FabiZhang，YoshifumiIkoma，JinpingZhang，KeXu，KatsuhikoSaito，QixinGuo，CharacterizationofepitaxialZnTelayersgrownonGaAssubstratesbytransmissionelectronmicroscopyandphotoluminescence，JournalofVacuumScienceandTechnologyA，2012，30:021508。