个人简历

教育背景 2005.09－2009.06 华中科技大学，电子科学与技术专业，博士学位 2002.09－2005.06 华中科技大学，电子科学与技术专业，硕士学位 1998.09－2002.06 华中科技大学，电子科学与技术专业，学士学位 工作履历 2013.07－至今 电子科技大学，副教授 2009.09－2013.06 电子科技大学，讲师

研究领域

非易失性存储器及嵌入式应用 包括铁电存储器、阻变存储器、Flash，以及基于非易失性存储单元作为开关单元的现场可编程门阵列FPGA。

近期论文

[1] J.J. Li, P. Li, G.J. Zhang, J. Yu, Y.Y. Wu and X.Y. Wen. The thickness effect of Bi3.25La0.75Ti3O12 buffer layer in PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 (PZT/BLT) multilayered ferroelectric thin films. Thin Solid Films. 519: 6021-6025, 2011 [2] J.J. Li, P. Li, G.J. Zhang, J. Yu, J. Li, W.M. Yang. Effect of annealing pressure on structure and properties of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by sol-gel method. Journal of Materials Science: Materials in Electronics, 22(3): 299-303, 2011 [3] J.J. Li, W.M. Yang and J. Yu. Characterization and First Principle Studies on Pb-substituted (Ba,Sr)TiO3 Ceramics. Integrated Ferroelectrics, 113: 75-82, 2009 [4] J.J. Li, J. Yu, J. Li, W.M. Yang and Y.B. Wang. Co-effect of Annealing Temperature and Ambient on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Films. Integrated Ferroelectrics, 110: 43-54, 2009 [5] J.J. Li, J. Li, G. Peng, Y.B. Wang and J. Yu. The Effect of A-site La and Nd Substitution on The Residual Stress of Bi4Ti3O12 Thin Films Fabricated by Sol-Gel Method. Integrated Ferroelectrics, 110: 80-86, 2009 [6] X.D. Xie, W. Li, J.J. Li, G. Wang. High performance floating-gate technology compatible antifuse. Electronics Letters, 49 (12): 763-764, 2013