个人简历

吉林大学半导体专业本科、硕士，清华大学材料学博士，先后服务于北京大学、名古屋大学和奈良先端科学技术大学院大学，现大连理工大学教授，博士生导师（微电子、控制、凝聚态物理）。
课题组重视学术交流、国际化和对外合作，近年指导研究生解决核心关键科学技术问题多项，在国际顶级学术期刊发表学术论文数十篇，培养的研究生多次获得博士生优秀论文单项奖学金和国家优秀学生奖学金，深受业界欢迎。
招收推免生 生源范围：材料/物理/化学/电子信息类，等。
Prof. Dejun WANG received the B.S. and M.S. degree in semiconductors from Jilin University, Changchun, China; and the Ph.D. degree in materials science from Tsinghua University, Beijing, China. He has worked in Peking University, Nagoya University and Nara Institute of Science and Technology.
Prof. Wang joined Dalian University of Technology (DUT) in 2004 as a professor in the field of microelectronics. His research interests are semiconductor defect physics, semiconductor SiC & GaN device physics and technology, Si3DP/GSIc technologies, sensor chip, and intelligent electronic safety control. The recent work mainly includes the physics and technology of SiO2/SiC interfaces, metal-SiC contacts, oxidation technology of SiC semiconductor, and the development of AI-IC Technologies.

著作成果
半导体材料与器件表征技术
专利
镀金金属衬底上的氮化铝镓铟/二硫化钼钨膜及制备方法
一种柔性聚酰亚胺衬底上的氮化镓基薄膜及其制备方法
一种降低SiC MOS界面态密度的表面预处理方法
镀金金属衬底上的氮化铝镓铟/二硫化钼钨膜及制备方法
石墨烯改性图形化金属衬底上的氮化镓基薄膜及制备方法
一种柔性聚酰亚胺衬底上的氮化镓基薄膜及其制备方法
一种自感知便携式图像无线监控设备及使用方法
一种降低SiO₂/SiC界面态密度的方法
一种降低SiC MOS界面态密度的表面预处理方法
一种提高碳化硅半导体欧姆接触特性的方法
科研项目
存算一体器件及其计算新架构, 国家重点研发计划, 2019/09/16, 进行
SiC MOS器件近界面氧化物缺陷与阈值电压漂移抑制技术研究, 国家自然科学基金, 2018/08/16, 进行
SiC MOS器件界面缺陷及其钝化研究, 国家自然科学基金, 2014/09/01, 完成
系统级封装技术工艺加工, 2011/11/03-2011/12/31, 进行
新一代半导体SiC材料表面处理技术, 辽宁省自然科学基金, 2007/01/01-2009/12/31, 完成
SiC半导体MOS结构界面态研究, 教育部留学归国人员科研启动基金项目, 2007/01/01-2009/03/31, 完成
2006年度教育部新世纪优秀人才支持计划, 教育部新世纪优秀人才支持计划项目, 2006/12/31-2009/12/31, 完成
新一代半导体SiC材料与器件基础问题, 2005/11/21-2008/06/26, 结题, 国家重大基础研究专项
中低压SiC材料、器件及其在电动汽车充电设备中的应用, 国家重点研发计划, 2016/07/22-2019/03/25, 进行
学术荣誉
教育部\

研究领域

1. 智能电子控制及安全；传感器与传感网 Sensor Chip, Intelligent electronic safety control
2. 人工智能类脑芯片技术 AI-IC Technologies
3. 半导体碳化硅SiC、氮化镓GaN电子器件科学 Semiconductor SiC & GaN Device Physics and Technology;
4. 半导体缺陷物理学 Semiconductor Defect Physics"1. Semiconductor Defect Physics;
2. Semiconductor Device Physics and Technology;
3. Integrated Circuit Technologies;
4. Sensor Chip

近期论文

[1]Yang, Chao,Yin, Zhipeng,Zhang, Fanglong,Su, Yan,Qin, Fuwen,Wang, Dejun.Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors[J],APPLIED SURFACE SCIENCE,2020,513
[2]Zhang, Yi-Jie,Yin, Zhi-Peng,Su, Yan,Wang, De-Jun.Passivation of carbon dimer defects in amorphous SiO2/4H-SiC(0001) interface: A first-principles study[J],CHINESE PHYSICS B,2018,27(4)
[3]Haipeng Zhang,王德君.A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability[J],Journal of Semiconductors,2018,39(7):7400401-7400411
[4]杨超,王德君.Capacitance–Voltage Measurements and Bias Temperature Stress Induced Flatband Voltage Instability in 4H-SiC MOS Capacitors[A],Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018),2018,2018(July):13-26
[5]Zhang Haipeng,Wang Dejun,Geng Lu,Lin Mi,Zhang Zhonghai,Lu Weifeng,Wang Xiaoyuan,Wang Ying,Zhang Qiang,Bai Jianling.High voltage InGaN/GaN/AlGaN RTD suitable for ESD protection applications of GaN/InGaN-based devices and ICs validated by simulation results[A],2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA),2018
[6]Wu, Zijian,Cai, Jian,Wang, Qian,Wang, Junqiang,Wang, Dejun.Wafer-Level Hermetic Package by Low-Temperature Cu/Sn TLP Bonding with Optimized Sn Thickness[J],JOURNAL OF ELECTRONIC MATERIALS,2017,46(10):6111-6118
[7]王德君,何淼,秦芝,黄庆,都时禹.碳化铀核燃料缺陷结构的研究现状[J],核技术,2017,40(7):83-94
[8]Wang, Junqiang,Wang, Qian,Wu, Zijian,Tan, Lin,Cai, Jian,Wang, Dejun.Plasma combined self-assembled monolayer pretreatment on electroplated-Cu surface for low temperature Cu-Sn bonding in 3D integration[J],APPLIED SURFACE SCIENCE,2017,403:525-530
[9]He M.,Du S.,Wang D..First-principles study of advanced nuclear materials: Defect behavior and fission products in U-Si system[A],International Symposium on Advanced Material Research, ISAMR 2017,2017,753 KEM:134-140
[10]Li, Wenbo,Wang, Dejun,Pan, Yan,Yang, Fei,Li, Ling,Wang, Fangfang,Zheng, Liu,Xia, Jinghua,Qin, Fuwen,Wang, Xiaolin,Li, Yongping,Liu, Rui.Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study[J],CHINESE PHYSICS B,2017,26(3)
[11]王德君.Passivation Technology and Electronic Properties of SiC MOS Interface Traps[A],International Forum on Wide Bandgap Semiconductors China (IFWS 2017),2017,68-68
[12]王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-Si system[J],Key Engineering Materials,2017,753:134-140
[13]Cai, Jian,Wang, Qian,Wang, Dejun,Wang, Junqiang,Wu, Zijian.Effects of Current Stress for Low Temperature Cu/Sn/Cu Solid-State-Diffusion Bonding[A],2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017),2017,1742-1747
[14]Wang, Junqiang,Wang, Qian,Wu, Zijian,Wang, Dejun,Cai, Jian.Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration[J],IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY,2017,7(1):19-26
[15]Huang, Lingqin,Geiod, Rechard,Wang, Dejun.Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(12)
[16]Wang, Junqiang,Wang, Qian,Liu, Ziyu,Wu, Zijian,Cai, Jian,Wang, Dejun.Activation of electroplated-Cu surface via plasma pretreatment for low temperature Cu-Sn bonding in 3D interconnection[J],APPLIED SURFACE SCIENCE,2016,384:200-206
[17]Wang, Junqiang,Wang, Qian,Wang, Dejun,Cai, Jian.Study on Ar(5%H-2) Plasma Pretreatment for Cu/Sn/Cu Solid-State-Diffusion Bonding in 3D Interconnection[A],66th IEEE Electronic Components and Technology Conference (ECTC),2016,2016-August:1765-1771
[18]Jiang, Ying,Wang, Qingpeng,Zhang, Fuzhe,Li, Liuan,Shinkai, Satoko,Wang, Dejun,Ao, Jin-Ping.Improvement of device isolation using field implantation for GaN MOSFETs[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2016,31(3)
[19]Liu, Bingbing,Qin, Fuwen,Wang, Dejun.Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing[J],APPLIED SURFACE SCIENCE,2016,364:769-774
[20]王德君.SiC半导体电子器件关键技术基础问题研究进展[A],第十届中国半导体行业协会半导体分立器件分会年会,2016,7(7):11-13
[21]秦福文,王德君.碳化硅MOS器件氧化层界面附近碳存在形式的理论研究进展[J],智能电网,2016,6(1):12-17
[22]王晓琳,刘冰冰,秦福文,王德君.氮氢混合等离子体处理对SiC MOS电容可靠性的影响[J],固体电子学研究与进展,2016,36(1):71-77
[23]Liu, Bingbing,Qin, Fuwen,Wang, Dejun.Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing[J],APPLIED SURFACE SCIENCE,2015,355:59-63
[24]Huang, Lingqin,Wang, Dejun.Temperature dependent electrical characteristics of Pt Schottky barriers fabricated on lightly and highly doped n-type 4H-SiC[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2015,54(11)
[25]Huang, Haiyun,Wang, Dejun,Xu, Yue.A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics[J],SENSORS,2015,15(10):27359-27373
[26]Jiang, Ying,Wang, Qingpeng,Zhang, Fuzhe,Li, Liuan,Zhou, Deqiu,Liu, Yang,Wang, Dejun,Ao, Jin-Ping.Reduction of leakage current by O-2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors[J],APPLIED SURFACE SCIENCE,2015,351:1155-1160
[27]黄海云,王德君,徐跃.CMOS集成2D垂直型霍尔传感器电路设计[J],电子测量与仪器学报,2015,29(9):1295-1301
[28]Wang, Qingpeng,Jiang, Ying,Zhang, Jiaqi,Kawaharada, Kazuya,Li, Liuan,Wang, Dejun,Ao, Jin-Ping.A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2015,30(7)
[29]Wang, Qingpeng,Jiang, Ying,Zhang, Jiaqi,Kawaharada, Kazuya,Li, Liuan,Wang, Dejun,Ao, Jin-Ping.Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2015,30(6)
[30]Huang, Lingqin,Wang, Dejun.Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC[J],JOURNAL OF APPLIED PHYSICS,2015,117(20)
[31]Cai, Jian,Wang, Junqiang,Wang, Qian,Liu, Ziyu,Wang, Dejun,Seo, Sun-Kyoung,Cho, Tae-Je.Low Temperature Solid-State-Diffusion Bonding for Fine-Pitch Cu/Sn/Cu Interconnect[A],IEEE 65th Electronic Components and Technology Conference (ECTC),2015,2015-July:1616-1623
[32]Wang, Qingpeng,Jiang, Ying,Zhang, Jiaqi,Li, Liuan,Kawaharada, Kazuya,Wang, Dejun,Ao, Jin-Ping.Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process[J],APPLIED PHYSICS EXPRESS,2015,8(4)
[33]Li, Wenbo,Zhao, Jijun,Wang, Dejun.An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of typical defects[J],SOLID STATE COMMUNICATIONS,2015,205:28-32
[34]汤斌,李文波,刘冰冰,刘道森,秦福文,王德君.电子回旋共振氮等离子体氧化后退火对4H-SiC MOS电容TDDB特性的影响[J],固体电子学研究与进展,2015,35(2):191
[35]江滢,敖金平,王德君.GaN场效应晶体管的器件隔离技术[A],第一届全国宽禁带半导体学术及应用技术会议,2015,273-274
[36]王德君.宽带隙半导体SiC 器件表面界面基础问题研究进展[A],第一届全国宽禁带半导体学术及应用技术会议,2015,97-98
[37]王德君.Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors[J],Applied Surface Science,2015,351(10):1155-1160
[38]刘冰冰,秦福文,王德君.氢氮等离子体表面预处理改善SiO2/SiC界面特性[A],第一届全国宽禁带半导体学术及应用技术会议,2015,118-119
[39]秦福文,王德君.Enhanced TiC/SiC Ohmic contacts by electronic cyclotron resonance hydrogen plasma pretreatment and low temperature post-annealing[J],Applied Surface Science,2015,355(11):59-63
[40]Li, Wenbo,Zhao, Jijun,Wang, Dejun.Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface[J],AIP ADVANCES,2015,5(1)
[41]Wang, Qingpeng,Jiang, Ying,Miyashita, Takahiro,Motoyama, Shin-ichi,Li, Liuan,Wang, Dejun,Ohno, Yasuo,Ao, Jin-Ping.Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure[J],SOLID-STATE ELECTRONICS,2014,99:59-64
[42]密荣荣,陈子洋,王德君.林区火灾监测报警系统设计及实现[J],测控技术,2014,33(8):37-40,44
[43]Liu, Bingbing,Huang, Lingqin,Zhu, Qiaozhi,Qin, Fuwen,Wang, Dejun.Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma (vol 104, 202101, 2014)[J],APPLIED PHYSICS LETTERS,2014,104(26)
[44]Liu, Bingbing,Huang, Lingqin,Zhu, Qiaozhi,Qin, Fuwen,Wang, Dejun.Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma[J],APPLIED PHYSICS LETTERS,2014,104(20)
[45]Jiang, Y.,Ohno, Y.,Wang, Q. P.,Tamai, K.,Li, L. A.,Shinkai, S.,Miyashita, T.,Motoyama, S-I,Wang, D. J.,Ao, J-P.Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2014,29(5)
[46]朱祥宇,张海鹏,王俊强,王德君.条纹集电极CIGBT的特性仿真研究[J],电力电子技术,2014,48(3):74-76
[47]Zhu Q.,Wang D..Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors[J],Journal of Semiconductors,2014,35(2)
[48]Wang, Qingpeng,Jiang, Ying,Li, Liuan,Wang, Dejun,Ohno, Yasuo,Ao, Jin-Ping.Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions[J],IEEE TRANSACTIONS ON ELECTRON DEVICES,2014,61(2,SI):498-504
[49]陶小妍,张海鹏,阴亚东,王德君.基于TSPC的4/5双模前置分频器设计[J],半导体技术,2014,39(1):33-37
[50]王德君.A Compact Behavioral Simulation Model for CMOS Vertical Hall-effect Devices[J],ECS Transactions,2014,60(1):33-38
[51]王德君.Process dependency on threshold voltage of GaN MOSFETs on AlGaN/GaN Heterostructure[J],Solid-State Electronics,2014,99(9):59-64
[52]王德君.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation technique[J],ECS Transactions,2014,60(1):45-50
[53]秦福文,王德君.Publishers Note: Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma [Appl. Phys. Lett. 104, 202101 (2014)][J],Applied Physics Letters,2014,104(26):269902-269902
[54]Zhu, Qiaozhi,Qin, Fuwen,Li, Wenbo,Wang, Dejun.Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing[J],PHYSICA B-CONDENSED MATTER,2014,432:89-95
[55]Cheng, Xiaojun,Zhang, Haipeng,Qi, Ruisheng,Su, Buchun,Zhao, Weili,Wang, Dejun.Silicon-on-insulator lateral-insulated-gate-bipolar-transistor with built-in self-anti-ESD diode[J],Sensors and Transducers,2014,171(5):86-92
[56]Huang, Haiyun,Xu, Yue,Wang, Dejun,Wu, Jun,Qin, Huibin,Hu, Yongcai.A compact behavioral simulation model for CMOS vertical hall-effect devices[A],2014,60(1):33-38
[57]Huang, Haiyun,Xu, Yue,Wang, Dejun,Wu, Jun,Qin, Huibin.Improved magnetic sensitivity of CMOS vertical Hall device by using partial implantation technique[A],2014,60(1):45-50
[58]Zhao T.,Cai J.,Li Y.,Wang Q.,Wang D..Integrated passive filters based on silicon substrate for SiP application[A],2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013,2013,510-515
[59]Li, Wenbo,Zhao, Jijun,Zhu, Qiaozhi,Wang, Dejun.Oxidation of step edges on vicinal 4H-SiC(0001) surfaces[J],APPLIED PHYSICS LETTERS,2013,103(21)
[60]Zhu, Qiaozhi,Qin, Fuwen,Li, Wenbo,Wang, Dejun.Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing[J],APPLIED PHYSICS LETTERS,2013,103(6)