王子兰
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主持科研项目2015-2017 “博士后国际交流计划”引进项目2019-2020 中央高校基本科研业务费“InGaN纳米线量子点器件的表面态调控和性能优化”获得奖励 2018年获天津市“131”创新型人才培养工程人才称号教育经历2012.1 -- 2015.1 香港大学 物理学 博士 2009.9 -- 2011.9 香港浸会大学 物理学 硕士 2005.9 -- 2009.6 南开大学 物理学 学士 \t工作经历 2019.9 -- 至今 大连理工大学光仪学院 高校教师 2015.6 -- 2017.6 清华大学 博士后研究领域
微纳光电子器件中的载流子复合特性:利用时间分辨光谱分析载流子在量子点和量子阱样品中的动力学特性;通过调控表面能带提高InGaN/GaN纳米线量子点的辐射复合效率。宽禁带半导体材料的制备和缺陷表征:用脉冲激光沉积法生长新型宽禁带半导体材料,通过正电子湮灭技术和深能级瞬态谱研究半导体材料的缺陷特性;探究特征发光的缺陷来源,建立载流子局域化复合的物理模型。 表面等离子体与波导耦合研究:在显微光路中观察和控制表面等离子体的传播,研究表面等离子体与波导的耦合。""近期论文
1. Wang Z., Hao Z. B., Yu J. D., et al. (2019). Surface-induced carrier localization and recombination characteristics in InGaN/GaN quantum dots in nanopillars. The Journal of Physical Chemistry C. 123(9): 5699-5704.2. Wang, Z., Luo C., Anwand W., et al. (2019). Zn-monovacancy and vacancy cluster in ZnO films grown by pulsed laser deposition. Scientific Reports, 9. 3. Wang Z., Wang L., Xing Y., et al. (2017). Consistency on two kinds of localized centers examined from temperature-dependent and time-resolved photoluminescence in InGaN/GaN multiple quantum wells. ACS Photonics, 4(8), 2078-2084.4. Wang Z., Hao Z. B., Yu J. D., et al. (2017). Manipulating the Band Bending of InGaN/GaN Quantum Dots in Nanowires by Surface Passivation. The Journal of Physical Chemistry C, 121(11), 6380-6385. 5. Ling, F. C., Wang, Z., Ho, L. P., et al. (2016). Defects in zinc oxide grown by pulsed laser deposition. Physica B: Condensed Matter, 480, 2-6. 6. Wang, Z., Su, S. C., Younas, M., Ling, F. C. C., Anwand, W., & Wagner, A. (2015). The Zn-vacancy related green luminescence and donor–acceptor pair emission in ZnO grown by pulsed laser deposition. RSC Advances, 5(17), 12530-12535.7. Wang, Z., Su, S., Ling, F. C. C., Anwand, W., & Wagner, A. (2014). Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition. Journal of Applied Physics, 116(3), 033508. 8. Lao, X., Yang, Z., Su, Z., Wang, Z., et al. (2018). Luminescence and Thermal Behaviors of Free and Trapped Excitons in Cesium Lead Halide Perovskite Nanosheets. Nanoscale, 10, 9949-9956. 9. Su, Z. C., Wang, Z., Yu, J. D., Yi, Y., et al. (2017). Managing Green Emission in Coupled InGaN QW–QDs Nanostructures via Nanoengineering. The Journal of Physical Chemistry C, 121(40), 22523-22530.10. Xing, Y., Wang, L., Yang, D., Wang, Z., et al. (2017). A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures. Scientific Reports, 7, 45082.11. Xing, Y., Wang, L., Wang, Z., Hao, Z., et al. (2017). A comparative study of photoluminescence internal quantum efficiency determination method in InGaN/GaN multi-quantum-wells. Journal of Applied Physics, 122(13), 135701.12. Li, G. X., Wang, Z., Chen, S. M., & Cheah, K. W. (2011). Narrowband plasmonic excitation on gold hole-array nanostructures observed using spectroscopic ellipsometer. Optics Express, 19(7), 6348-6353.标签: 大连理工大学 光电工程与仪器科学学院
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