个人简历

教育经历
Education Background
1997.82001.12吉林大学凝聚态物理博士
1986.81989.7清华大学电子材料与工艺硕士
1981.81986.7清华大学电子物理与器件学士
工作经历
Work Experience
2004.2至今大连理工大学教师
1989.72004.2吉林大学教师
专利
镀金金属衬底上的氮化铝镓铟/二硫化钼钨膜及制备方法
一种柔性聚酰亚胺衬底上的氮化镓基薄膜及其制备方法
石墨烯改性图形化金属衬底上的氮化镓基薄膜及制备方法
AlN/GaN/自持金刚石结构SAW器件及制备方法
科研项目
AlN/自持金刚石膜结构高频声表面波滤波器的研制, 国家自然科学基金项目, 2010/09/25-2011/12/31, 完成
科研奖励
吉林省科学技术进步奖
吉林省科学技术进步奖

研究领域

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近期论文

[1]Guo, Yu,Ma, Liang,Mao, Keke,Ju, Minggang,Bai, Yizhen,Zhao, Jijun,Zeng, Xiao Cheng.Eighteen functional monolayer metal oxides: wide bandgap semiconductors with superior oxidation resistance and ultrahigh carrier mobility[J],NANOSCALE HORIZONS,2019,4(3):592-600
[2]赵纪军,白亦真.Copper(I) sulfide: a two-dimensional semiconductor with superior oxidation resistance and high carrier mobility[J],NANOSCALE HORIZONS,2018,4:223-230
[3]Guo, Yu,Zhou, Si,Bai, Yizhen,Zhao, Jijun.Defects and oxidation of group-III monochalcogenide monolayers[J],JOURNAL OF CHEMICAL PHYSICS,2017,147(10):104709
[4]Jing, S.,Bai, Y.,Qin, F.,Xiao, J..Bias effects on AlMgB thin films prepared by magnetron sputtering[J],SURFACE ENGINEERING,2017,33(8):592-596
[5]Gao, Nan,Guo, Yu,Zhou, Si,Bai, Yizhen,Zhao, Jijun.Structures and Magnetic Properties of MoS2 Grain Boundaries with Antisite Defects[J],JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(22):12261-12269
[6]周思,赵纪军,白亦真.Gas adsorption on monolayer blue phosphorus: implications for environmental stability and gas sensors[J],NANOTECHNOLOGY,2017,28(17):175708
[7]Guo, Yu,Zhou, Si,Bai, Yizhen,Zhao, Jijun.Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers[J],APPLIED PHYSICS LETTERS,2017,110(16)
[8]Guo, Yu,Zhou, Si,Bai, Yizhen,Zhao, Jijun.Oxidation Resistance of Monolayer Group-IV Monochalcogenides[J],ACS APPLIED MATERIALS & INTERFACES,2017,9(13):12013-12020
[9]Gao, Nan,Liu, Hongsheng,Zhou, Si,Bai, Yizhen,Zhao, Jijun.Interaction between Post-Graphene Group-IV Honeycomb Monolayers and Metal Substrates: Implication for Synthesis and Structure Control[J],JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(9):5123-5129
[10]Guo, Yu,Zhou, Si,Zhang, Junfeng,Bai, Yizhen,Zhao, Jijun.Atomic structures and electronic properties of phosphorene grain boundaries[J],2D MATERIALS,2016,3(2)
[11]Guo, Yu,Zhou, Si,Bai, Yizhen,Zhao, Jijun.Tunable Thermal Conductivity of Silicene by Germanium Doping[J],JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM,2016,29(3):717-720
[12]Zhao, J.,Qin, F.,Bai, Y.,Zhao, Y.,Wang, H.,Kang, R.,Pang, J.,Jing, S..GaN Films deposited on ITO coated glass[J],SURFACE ENGINEERING,2015,31(7):534-539
[13]Kang, R. F.,Bai, Y. Z.,Qin, F. W.,Zhao, Y.,Pang, J. Q.,Zhao, J..Effect of deposition pressure on mechanical properties of Al-Mg-B thin films[J],SURFACE ENGINEERING,2014,30(12):900-904
[14]Pang, J.,Bai, Y.,Qin, F.,Pan, L.,Zhao, Y.,Kang, R..Deposition of Ti-Si-N films on Al substrates by magnetron sputtering[J],SURFACE ENGINEERING,2013,29(10):749-754
[15]Zhao, Yue,Li, Yang,Qin, Fuwen,Bai, Yizhen,Ju, Zhenhe,Zhao, Yan,Zhang, Xiaohui,Li, Shuangmei,Zhang, Dong,Bian, Jiming.Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD[J],VACUUM,2013,92:77-80
[16]Qu, Wen-Chao,Wu, Ai-Min,Bai, Yi-Zhen,Jiang, Xin.Synthesis and characterization of amorphous Al-Mg-B prepared by various deposition temperatures[J],RARE METALS,2013,32(2):159-164
[17]Guan, Changyu,Zhao, Jijun,Jia, Fuchao,Zhuang, Chunqiang,Bai, Yizhen,Jiang, Xin.Relationship between chemical compositions of magnetron sputtered B-C-N films and various experimental parameters[J],VACUUM,2012,86(10):1499-1504
[18]Qin Fuwen,Zhang Dong,Bai Yizhen,Ju Zhenhe,Li Shuangmei,Li Yucai,Pang Jiaqi,Bian Jiming.Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD[J],RARE METALS,2012,31(2):150-153
[19]Qu Wenchao,Wu Aimin,Wu Zhanling,Bai Yizhen,Jiang Xin.Influence of boron contents on properties of AlMgB films prepared by RF magnetron sputtering[J],RARE METALS,2012,31(2):164-167
[20]Pan Li,Bai Yizhen,Zhang Dong,Wang Jian.Ti-Si-N films prepared by magnetron sputtering[J],RARE METALS,2012,31(2):183-188
[21]白亦真.Research on Ti-Si-N films prepared by magnetron sputtering[J],RARE METALS,2012,31(2):182-187
[22]吴爱民,白亦真.Influence of boron contents on the structure and hardness properties of Al-Mg-B films by R.F. magnetron sputtering[J],Rare Matels,2012,31(2):164-167
[23]Zhang, Dong,Qin, Fuwen,Bai, Yizhen,Bian, Jiming,Li, Shuai,Pan, Li,Zhi, Anbo,Liu, Xinglong,Jiang, Xin.Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD[J],DIAMOND AND RELATED MATERIALS,2012,21:88-91
[24]Zhang, D.,Bian, J. M.,Qin, F. W.,Wang, J.,Pan, L.,Zhao, J. M.,Zhao, Y.,Bai, Y. Z.,Du, G. T..Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices[J],MATERIALS RESEARCH BULLETIN,2011,46(10):1582-1585
[25]曲文超,吴爱民,吴占玲,白亦真,姜辛.磁控溅射Al-Mg-B薄膜成分优化[J],金属学报,2011,47(05):628-633
[26]Zhang, Dong,Bai, Yizhen,Qin, Fuwen,Jia, Fuchao,Wang, Jian,Bian, Jiming.Deposition and properties of highly C-oriented GaN films on diamond substrates[J],APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,102(2):353-358
[27]Zhang, Dong,Qin, Fuwen,Bai, Yizhen,Wang, Jian,Zhou, Zhifeng,Yu, Bo,Bian, Jiming.Influence of N-2 flux on the improvement of highly c-oriented GaN films on diamond substrates[J],VACUUM,2011,85(7):725-729
[28]蒋雪,曲文超,赵纪军,吴爱民,白亦真,姜辛.AlMgB14 三元超硬硼化物的实验制备与理论研究[J],中国科学: 物理学 力学 天文学,2011,41(6):764-774
[29]赵纪军,吴爱民,白亦真.Experimental and therotical study on the mechanical properties of AlMgB14[J],Science China: Physics, Mechanics & Astronomy,2011,41(6):764-774
[30]白亦真,秦福文,边继明.Deposition and properties of highly C-oriented GaN films[J],Applied physics A,2011,102(2):353-358
[31]秦福文,白亦真,边继明.Influence of N2 Flux on the Improvement of Highly c-oriented GaN Films on Diamond Substrates[J],Vacuum,2011,85(7):725-729
[32]张东,秦福文,白亦真,王健,周志峰,于博.Influence of N2 Flux on the Improvement of Highly c-oriented GaN Films on[J],Vacuum,2011,85(7):725-729
[33]王健,白亦真,张东,潘丽,柳浩,管昌雨,吴占玲,赵纪军.用不同靶材制备B-C-N薄膜及其红外表征[J],吉林大学学报（理学版）,2010,48(6):1027-1030
[34]Wu, Zhanling,Bai, Yizhen,Qu, Wenchao,Wu, Aimin,Zhang, Dong,Zhao, Jijun,Jiang, Xin.Al-Mg-B thin films prepared by magnetron sputtering[J],5th Symposium on Vacuum based Science and Technology,2010,85(4,SI):541-545
[35]贾福超,白亦真,屈芳,孙剑,赵纪军,姜辛.气压和偏流对高掺硼金刚石晶体性质的影响[J],新型炭材料,2010,25(5):357-362
[36]Jia, Fuchao,Bai, Yizhen,Qu, Fang,Zhao, Jijun,Zhuang, Chunqiang,Jiang, Xin.Effect of B/C ratio on the physical properties of highly boron-doped diamond films[J],VACUUM,2010,84(7):930-934
[37]赵纪军,吴爱民,白亦真.Mechanical and electronic properties of B12-based ternary crystals of orthorhombic phase[J],Journal of Physics: Condensed Matter,2010,19(1):21-25
[38]白亦真,秦福文,边继明.Deposition of GaN Films on Freestanding CVD Thick Diamond Films[J],Materials Science Forum,2010,654(1):1740-1743
[39]白亦真,秦福文,边继明,赵纪军.Preparation and Characteristics of GaN Films on Freestanding CVD Thick[J],Chinese Physics Letters,2010,27(1):181021-181024
[40]Zhang Dong,Bai Yi-Zhen,Qin Fu-Wen,Bian Ji-Ming,Jia Fu-Chao,Wu Zhan-Ling,Zhao Ji-Jun,Jiang Xin.Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films[J],CHINESE PHYSICS LETTERS,2010,27(1)
[41]Zhuang, Chunqiang,Zhao, Jijun,Jia, Fuchao,Guan, Changyu,Wu, Zhanling,Bai, Yizhen,Jiang, Xin.Tuning bond contents in B-C-N films via temperature and bias voltage within RF magnetron sputtering[J],SURFACE & COATINGS TECHNOLOGY,2009,204(5):713-717
[42]唐元广,吴汉华,常鸿,陈根余,桑勇,白亦真.阴极电压脉冲占空比对钛合金微弧氧化膜特性的影响[J],物理学报,2009,58(7):4840-4845
[43]贾福超,白亦真,庄春强,屈芳,邢娇杨,赵纪军,姜辛.B-C-N薄膜的制备及其红外光谱表征[J],材料研究与应用,2009,3(1):19-22
[44]屈芳,白亦真,庄春强,贾福超,邢娇杨,姜辛.甲烷流量对高掺硼金刚石多晶薄膜形态生长的影响[J],材料研究与应用,2009,3(1):28-31
[45]屈芳,白亦真,施维,庄春强,贾福超,姜辛.高掺硼多晶金刚石薄膜的制备和表征[J],材料科学与工程学报,2009,26(2):42-44
[46]白亦真.The Influence of Gas Pressures and Bias Current on the Crystal Properties of Highly Boron-doped Diamond Films[A],Russian Chinese Workshop 2009 Perspective Plasma Technologies,2009,10-10
[47]孙剑,白亦真,谷建峰,刘明,张庆瑜.基片温度对金刚石上沉积ZnO薄膜特性的影响[J],半导体光电,2008,29(6):884-887,892
[48]Sun Jian,Bai YiZhen,Sun JingChang,Du GuoTong,Jiang Xin.Structural and electrical properties of ZnO films on freestanding thick diamond films[J],CHINESE SCIENCE BULLETIN,2008,53(19):2931-2934
[49]孙剑,白亦真,谷建峰,刘明,张庆瑜,姜辛.自持金刚石厚膜上沉积生长ZnO薄膜及发光特性[J],发光学报,2008,29(3):455-459
[50]白亦真.BCN薄膜的制备及红外光谱表征[A],2008
[51]白亦真.掺硼多晶金刚石薄膜电学性能的研究[A],2008
[52]白亦真.高掺杂多晶金刚石薄膜的制备与表征[A],2008
[53]吴汉华,龙北红,龙北玉,唐元广,常鸿,白亦真.钛合金微弧氧化过程中电学参量的特性研究[J],物理学报,2007,56(11):6537-6542
[54]孙剑,白亦真,杨天鹏,孙景昌,杜国同.自持金刚石厚膜上沉积N掺杂ZnO薄膜的生长及电学特性[J],吉林大学学报（理学版）,2007,45(5):822-826
[55]白亦真,金曾孙,吕宪义,韩雪梅.放电电流对热阴极等离子体化学气相沉积金刚石膜影响[J],大连理工大学学报,2007,47(3):313-316
[56]白亦真,吕宪义,韩雪梅,金曾孙,吕天山,白媛.金刚石膜制备工艺对其应力-应变特性的影响[J],吉林大学学报（理学版）,2006,44(5):784-786
[57]孙剑,杨天鹏,白亦真,徐艺滨,王新胜,杜国同.自持金刚石厚膜上沉积ZnO薄膜的研究[A],全国薄膜技术学术研讨会,2006,Vol.26:3
[58]白亦真,吕宪义,金曾孙,姜志刚.钽阴极在热阴极辉光放电中行为与防护[J],大连理工大学学报,2006,46(2):157-159
[59]白亦真,吕宪义,金曾孙,姜志刚.影响大电流热阴极辉光放电稳定工作的因素[J],吉林大学学报（理学版）,2006,44(1):89-92
[60]孙剑,杨天鹏,白亦真,徐艺滨,王新胜,杜国同.自持金刚石厚膜上沉积ZnO薄膜的研究[J],真空科学与技术学报,2006,26(z1):140-142