个人简介
左则文,1978年8月生,安徽郎溪人,博士,副教授,硕士生导师。个人简介:1996年–2000年,安徽师范大学物理系学习并获得理学学士学位;2005年–2010年,南京大学物理系学习并获得工学博士学位;2016.3-2016.8,香港中文大学物理系,访问学者;2000年-至今,安徽师范大学物理与电子信息学院助教、讲师、副教授;
研究领域
硅基纳米材料、金属纳米材料及其在太阳电池、传感器等方面的应用
近期论文
1. Z. W. Zuo*,Y. B Wen, S. Zhang, Interface-induced nucleation and growth: a new route for fabricating ordered silver nanohole arrays, Nanoscale, 10, 14039 (2018).2.Z. W. Zuo*,K. Zhu, Y. B. Wen, S. Zhang, Quadrupolar plasmon resonance in arrays composed of small-sized Ag nanoparticles prepared by a dewetting method, Applied Surface Science, 454, 270 (2018).3. Z. W. Zuo*,Y. B Wen, S. Zhang, J. Qu, G. L. Cui, Y. Shi, Enhanced plasmon coupling of partly embedded gold nanospheres with surrounding silicon, Nanotechnology, 28, 285201 (2017).4. Z. W. Zuo*, K. Zhu, C. Gu, Y. B. Wen, G. L. Cui, J. Qu, Transparent, flexible surface enhanced Raman scattering substrates based on Ag-coated structured PET (polyethylene terephthalate) for in-situ detection, Applied Surface Science, 379, 66 (2016).5.Z. W. Zuo*, K. Zhu, L. X. Ning, G. L. Cui, J. Qu, W. X. Huang,Y. Shi,H. Liu, Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film, Nanotechnology, 26, 155601 (2015).6.Z. W. Zuo*, K. Zhu, L. X. Ning, G. L. Cui, J. Qu, Y.Cheng,J. Z. Wang, Y. Shi, D. S. Xu, Y. Xin, Highly sensitive surface enhanced Raman scattering substrates based on Ag decorated Si nanocone arrays and their application in trace dimethyl phthalate detection, Applied Surface Science, 25, 45 (2015).7.Z. W. Zuo*, K. Zhu, G. L. Cui, W. X. Huang, J. Qu, Y. Shi, Y. S. Liu, G. B. Ji, Improved antireflection properties and optimized structure for passivation of well-separated, vertical silicon nanowire arrays for solarcell applications, Solar Energy Materialsand Solar Cells, 125, 248 (2014).8. Z. W. Zuo*, G. L. Cui, Y. Shi, Y. S. Liu, G. B. Ji, Gold-thickness-dependent Schottky barrier height for charge transfer in metal-assisted chemicaletching of silicon, Nanoscale Research Letters 8, 193 (2013) .9. Z. W. Zuo, G. L. Cui, Y. Wang, J. Z. Wang, L. Pu, Y. Shi*, Substrate-thickness dependence of hydrogenated microcrystalline silicon nucleation rate on amorphous silicon layer, Chemical Vapor Deposition 19, 363(2013).10. Z. W. Zuo, G. L. Cui, Y. Wang, J. Z Wang, L. Pu, and Y. Shi*, GISAXS and ATR-FTIRstudies onstress-inducedmicrostructureevolution of a-Si:H under H2 plasmaexposure, Chinese Physics Letters 29, 106801 (2012).11. Z. W. Zuo, Y. Wang, J. Lu, J. Z. Wang, L. Pu, Y. Shi*, Y. D. Zheng, High rate deposition of microcrystalline silicon films using jet-type inductively coupled plasma chemical vapor deposition, Vaccum 86, 924 (2012).12. Z. W. Zuo, W. T. Guan, Y. Wang, J. Lu, J. Z. Wang, L. Pu, Y. Shi*, Y. D. Zheng, X. Y. Luo, H. H. Wang, Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon under hydrogen plasma treatment, Applied Physics Letters 98, 041902 (2011).13. Z. W. Zuo, W. T. Guan, Y. Xin, J. Lu, J. Z. Wang, L. Pu, Y. Shi*, Y. D. Zheng, Growth and microstructure properties of microcrystalline silicon films deposited using jet-ICPCVD, Journal of Semiconductor 32 (3), 032001 (2011).14. Z. W. Zuo, W. T. Guan, Y. Xin, J. Lu, J. Z. Wang, L. Pu, Y. Shi*, Y. D. Zheng, Crystallization control of the incubation layer in microcrystalline silicon films deposited by using jet-ICPCVD, Electrochemical and Solid-State Letters 13, H55 (2010).15. Z. W. Zuo, Y. Wang, Y. Xin, J. Lu, J. Z. Wang, L. Pu, Y. Shi*, Y. D. Zheng, Structural evolution of the incubation layer in microcrystalline silicon films deposited by Jet-ICPCVD, 10th International Conference on Solid-state and Integrated-circuit Technology Shanghai, 1-4, Nov., 1536 (2010).16. Y. S. Liu, G. B. Ji*, J. Y. Wang, X. Q. Liang, Z. W. Zuo, Y. Shi,Fabrication and photocatalytic properties of silicon nanowires by metal-assisted chemical etching: effect of H2O2 concentration,Nanoscale Research Letters 7, 663 (2012).17. J. Z. Wang, Z. Q. Shi, Z. S. Tao, X. L. Zhang, Z. W. Zuo, L. Pu, R. Zhang, Y. D. Zheng, F. Lu, Y. Shi*, Thermal treatment on the sensitization effect in Er-doped Si/Al2O3 superlattices, ACTA PHYSICA SINICA 58, 4243 (2009).