个人简介

EducationPh.D. Electrical Engineering and Computer Sciences, University of California, Berkeley, USA, 2013M.Phil. Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong , 2007B.S. Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong , 2004 Positions2016 – present Assistant Professor, Institute of Applied Physics and Materials Engineering, University of Macau2014 – 2015 Principal Engineer, Taiwan Semiconductor Manufacturing Company, Taiwan.TeachingPh.D. CoursesAPME 8022 Transmission Electron MicroscopyAPME 8003 Advanced Instruments for Materials CharacterizationUndergraduate CoursesGEST 1017 Mysteries of the UniverseGEST 1015 Physics and Modern Society

研究领域

Monolithic Integration of optoelectronics (e.g. Laser, detectors) with Silicon based technologyExploration of novel materials synthesized with low-cost solution-based processes for high-efficiency optoelectronic applicationsAdvanced materials characterization with electron microscopy

近期论文

1.Han, Z. Yan, W. K. Ng, Y. Xue, K. W. Ng, K. S. Wong, K. M. Lau “III–V micro- and nano-lasers deposited on amorphous SiO2” Applied Physics Letters 116 (17), 172102 (2020).2.J. Y. Dong, W. Y. Ji, S. P. Wang, Q. L. Yuan, Y. C. Kong, S. C. Su, K. W. Ng, Z. K. Tang “Solvent Effects on the Interface and Film Integrity of Solution-Processed ZnO Electron Transfer Layers for Quantum Dot Light Emitting Diodes” ACS Applied Electronic Materials 2 (4), 1074-1080 (2020).3.Y. Y. Zhao, S. N. Qu, X. Y. Feng, J. C. Xu, Y. Yang, S. C. Su, S. P. Wang, K. W. Ng “Tailoring the Photoluminescence Excitation Dependence of the Carbon Dots via an Alkali Treatment” The journal of physical chemistry letters 10 (16), 4596-4602 (2019).4.Han, Q. Li, K. W. Ng, S. Zhu, K. M. Lau “InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands” Nanotechnology 29 (22), 225601 (2018).5.Lu, I. Bhattacharya, H. Sun, T. T. D. Tran, K. W. Ng, G. Silveira, C. J. Chang-Hasnain “Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths” Optica 4 (7), 717-723 (2017).6.K Li*, K. W. Ng*, T. T. D. Tran, H. Sun, F. Lu, C. J. Chang-Hasnain “Wurtzite-phased InP micropillars grown on silicon with low surface recombination velocity,” Nano Letters 15 (11), 7189-7198 (2015) (Authors with * are co-first authors).7.Q. Li, K. W. Ng, K. M. Lau “Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon,” Appl. Phys. Lett. 106 (7), 072105 (2015).8.Chen, T. T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C Chang-Hasnain, “Nanolasers grown on silicon” Nature Photonics 5 (3), 170-175 (2011).